Investigating conduction mechanism and frequency dependency of nanostructured memristor device. (October 2015)

• Record Type: Journal Article
• Authors: Dongale, T.D.; Patil, K.P.; Gaikwad, P.K.; Kamat, R.K.
• Is Part Of: Materials science in semiconductor processing. Volume 38(2015:Oct.)
• Page Start: 228
• Page End: 233
• Publication Date: 2015-10
• Subjects: Linear drift model -- Memristor -- Monte Carlo -- SCLC; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.04.033
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The present paper depicts the simulation of conduction mechanism and frequency dependency of nanostructured memristor device. The simulation of memristor is carried out using linear drift model of memristor. Further effect of various frequencies on memristor device has been investigated. We present the simulation proof of Limiting Linear Characteristics theorem or Frequency Dependent Theorem of memristor device. Moreover, the nanoscopic conduction mechanism of memristor device is simulated and it is found that the Low Resistance State (LRS) of memristor device follows the Ohmic conduction mechanism. The conduction mechanism in the High Resistance State (HRS) is found to be very complex one and follows the space charge limited current (SCLC) theory.