Cite
MLA Citation
Thanh Thuy Trinh et al.. “Role of Schottky barrier height at source/drain contact for electrical improvement in high carrier concentration amorphous InGaZnO thin film transistors.” Materials science in semiconductor processing, vol. 38, n.d., pp. 50–56. http://access.bl.uk/ark:/81055/vdc_100042260017.0x00000c