Laser stimulated changes of the effective energy gap in chalcogenide CuInS2 photovoltaic films. (October 2015)

• Record Type: Journal Article
• Authors: Plucinski, K.J.; El-Naggar, A.M.; AlZayed, N.S.; Albassam, A.A.; Fedorchuk, A.O.; Kulwas, D.; Kityk, I.V.
• Is Part Of: Materials science in semiconductor processing. Volume 38(2015:Oct.)
• Page Start: 184
• Page End: 187
• Publication Date: 2015-10
• Subjects: Photoinduced effects -- Chalcogenide crystals -- Optoelecronics; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.03.046
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The studies of changes in the energy gap of the CuInS2 photovoltaic׳s films were carried out. It was observed substantial absorption edge spectral red shift by varying laser wavelengths, power density, and beam profile. The maximum energy gap shift (up to 0.24 eV) was achieved during illumination by the Er:glass ( λ =1540 nm) 35 ns pulsed lasers generating at wavelength 1.54 μm. The performed quantum chemical simulations have given an explanation of the observed photoinduced effects. The structural and quantum chemical analysis indicates on a principal role of the partial cationic atom׳s reorientations. The performed studies should open a new approach for desirable changes of photovoltaic efficiency in the studied films.