Synthesis and characterization of [Zn(acetate)2(amine)x] compounds (x=1 or 2) and their use as precursors to ZnO. (October 2015)
- Record Type:
- Journal Article
- Title:
- Synthesis and characterization of [Zn(acetate)2(amine)x] compounds (x=1 or 2) and their use as precursors to ZnO. (October 2015)
- Main Title:
- Synthesis and characterization of [Zn(acetate)2(amine)x] compounds (x=1 or 2) and their use as precursors to ZnO
- Authors:
- Hyslop, Jesse S.
Boydstun, Amanda R.
Fereday, Theron R.
Rusch, Joanna R.
Strunk, Jennifer L.
Wall, Christian T.
Pena, Cecelia C.
McKibben, Nicholas L.
Harris, Jerry D.
Thurber, Aaron
Punnoose, Alex
Brotherton, Jason
Walker, Pamela
Lowe, Lloyd
Rapp, Blake
Purnell, Shem
Knowlton, William B.
Hubbard, Seth M.
Frost, Brian J. - Abstract:
- Abstract: As an obvious candidate for a p-type dopant in ZnO, nitrogen remains elusive in this role. Nitrogen containing precursors are a potential means to incorporate nitrogen during MOCVD growth. One class of nitrogen-containing precursors are zinc acetate amines, yet, they have received little attention. The synthesis and single crystal X-ray structure of [Zn(acetate)2 (en)], and the synthesis of [Zn(acetate)2 (en)2 ], [Zn(acetate)2 (benzylamine)2 ], [Zn(acetate)2 (butylamine)2 ], [Zn(acetate)2 (NH3 )2 ], and [Zn(acetate)2 (tris)2 ], where en=ethylenediamine and tris=(tris[hydroxymethyl]aminomethane) are reported. The compounds were characterized by thermogravimetric analysis and pyrolyzed in air and inert gas to yield ZnO. These compounds are useful single source precursors to ZnO bulk powders by alkali precipitation and ZnO thin films by spray pyrolysis. The amine bound to the zinc influences the ZnO crystal size and shape and acts as a nitrogen donor for preparing nitrogen-doped ZnO during alkali precipitation. Thin films of ZnO prepared by spray pyrolysis using the precursors had a (100) preferred orientation and measured n-type to intrinsic conductivity.
- Is Part Of:
- Materials science in semiconductor processing. Volume 38(2015:Oct.)
- Journal:
- Materials science in semiconductor processing
- Issue:
- Volume 38(2015:Oct.)
- Issue Display:
- Volume 38 (2015)
- Year:
- 2015
- Volume:
- 38
- Issue Sort Value:
- 2015-0038-0000-0000
- Page Start:
- 278
- Page End:
- 289
- Publication Date:
- 2015-10
- Subjects:
- ZnO -- Single source precursors -- Crystal structure
Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.mssp.2015.04.001 ↗
- Languages:
- English
- ISSNs:
- 1369-8001
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5396.440600
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 6676.xml