The investigation of Al-doped ZnO as an electron transporting layer for visible-blind ultraviolet photodetector based on n-ZnO nanorods/p-Si heterojunction. (October 2015)

• Record Type: Journal Article
• Authors: Zhou, Hai; Mei, Jun; Gui, Pengbin; Tao, Pan; Song, Zehao; Wang, Hao; Fang, Guo-Jia
• Is Part Of: Materials science in semiconductor processing. Volume 38(2015:Oct.)
• Page Start: 67
• Page End: 71
• Publication Date: 2015-10
• Subjects: Al-doped ZnO -- Visible-blind -- ZnO nanorods -- Ultraviolet -- Photodetector; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.04.005
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: An n -ZnO nanorods/ p -Si heterojunction photodetector with Al-doped ZnO (AZO) as an electron transporting layer was fabricated. The heterojunction with 20 nm AZO film showed a better characteristic than that of the device without AZO, and it displays a rectification ratio of 8470 at ±3 V and a turn-on voltage of 1.8 V. Also, based on spectral responsivity measurement, the device with AZO coating showed higher responsivity and better visible-blind detectivity than those without AZO, and the peak responsivity of the photodetector with AZO was as high as ~0.49 A/W at 354 nm. Furthermore, the photodetector with AZO layer showed a bigger UV–visible responsivity ratio ( R 354 nm / R 546 nm ) than that of the photodetector without AZO coating at −2 V. The role of AZO layer was illustrated through energy band theory and the electron transport mechanism.