TEM investigation of semipolar GaN layers grown on Si(001) offcut substrates. (15th October 2015)

• Record Type: Journal Article
• Authors: Sorokin, L M; Myasoedov, A V; Kalmykov, A E; Kirilenko, D A; Bessolov, V N; Kukushkin, S A
• Is Part Of: Semiconductor science and technology. Volume 30:Number 11(2015:Nov.)
• Publication Date: 2015-10-15
• Subjects: microscopy -- semi-polar -- gallium nitride; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/11/114002
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: We present the results of a conventional and high-resolution electron microscopy investigation of thick (up to 15 μ m) semipolar GaN layers grown on Si(001) offcut substrates with 3 C -SiC and AlN buffer layers. GaN and AlN layers have been grown by chloride vapor phase epitaxy. The silicon carbide buffer layers were produced by a new method of solid-phase synthesis on 4 and 7° offcut Si(001) substrates. It is shown that the use of solid-phase synthesis for the formation of SiC layer allows one to grow a semipolar GaN layer. The asymmetrical defect structure of the semipolar layer is revealed.