The influence of pre-heating temperature on the CIGS thin film growth and device performance prepared in cracked-Se atmosphere. (24th August 2015)

• Record Type: Journal Article
• Authors: Li, Guangmin; Liu, Wei; Liu, Yiming; Lin, Shuping; Li, Xiaodong; Zhang, Yi; Zhou, Zhiqiang; He, Qing; Sun, Yun
• Is Part Of: Semiconductor science and technology. Volume 30:Number 10(2015:Oct.)
• Publication Date: 2015-08-24
• Subjects: CIGS -- cracked-Se -- pre-heating temperature -- large island grains -- reaction pathway; 84.60.Jt -- 88.40.jn -- 81.10.Aj -- 81.10.St; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/10/105012
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: The influence of pre-heating temperature on cracked–selenized Cu(In, Ga)Se2 (CIGS) films' structure, growth kinetics, and photovoltaic performance is investigated. The 'large island grains' on the upper surface are the precursors of Cu2− x Se and finally evolve into Cu2− x Se as the pre-heating temperature increases to 400 °C. The 'large island grains', as well as In2 Se3, are considered to be two decisive factors in forming CIGS as they facilitate the diffusion of cracked-Se into the thin films, because they make the films more incompact and suppress the fast formation of complete single CuInSe2 (CIS) during the 2nd heating. Stoichiometric CIGS thin films without a bi-layer structure and phase separation can be achieved by adjusting the appropriate pre-heating temperature. The performance of the solar cells is mainly influenced by the current leakage caused by small grains and cavities near the CIGS/Mo back contact.