High temperature laser diode based on a single sheet of quantum dots. (11th August 2015)

• Record Type: Journal Article
• Authors: Ledentsov, N N; Shchukin, V A; Maximov, M V; Shernyakov, Yu M; Payusov, A S; Gordeev, N Yu; Rouvimov, S S
• Is Part Of: Semiconductor science and technology. Volume 30:Number 10(2015:Oct.)
• Publication Date: 2015-08-11
• Subjects: quantum dot laser -- single-sheet quantum dot array -- high-temperature operation; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/10/105005
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: A single sheet of high-density InGaAs quantum dots (QDs) is used as a gain medium of InGaAs–GaAs–AlGaAs lasers. The devices operate at high power in the continuous mode beyond 160 °C with an emission wavelength up to ∼1.27 μ m. At short cavity lengths a strong broadening (>300 nm) of the electroluminescence spectrum is observed at high current densities, permitting light sources for broadly wavelength tuneable and multi-wavelength infrared lasers based on a single gain chip, and related frequency conversion devices for the whole visible spectrum range. High power cw operation (>2 W) limited by catastrophic optical mirror damage is realized.