Dispersive hybrid states and bandgap in zigzag graphene/BN heterostructures. (11th August 2015)

• Record Type: Journal Article
• Authors: Tran, Van-Truong; Saint-Martin, Jérôme; Dollfus, Philippe
• Is Part Of: Semiconductor science and technology. Volume 30:Number 10(2015:Oct.)
• Publication Date: 2015-08-11
• Subjects: zigzag graphene ribbons -- edge states -- graphene/BN -- wave function -- bandgap -- hybrid states -- interface states; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/10/105002
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: We study the properties of edge states in in-plane heterostructures made of adjacent zigzag graphene and Boron Nitride (BN) ribbons. While in pure zigzag graphene nanoribbons, gapless edge states are nearly flat and cannot contribute significantly to the conduction, at graphene/BN interfaces the properties of these states are significantly modified. They are still strongly localized at the zigzag edges of graphene, but they exhibit a high group velocity up to 4.3 × 10 5 m s −1 at the B-C interface and even 7.4 × 10 5 m s −1 at the N-C interface. For a given wave vector the velocities of N-C and B-C hybrid interface states have opposite signs. Additionally, in the case of the asymmetric structure BN/graphene/BN, a bandgap of about 207 meV is open for sub-ribbon widths of 5 nm. These specific properties suggest new ways to engineer and control the transport properties of graphene nanostructures.