High-quality GaN epitaxially grown on Si substrate with serpentine channels. (June 2018)

• Record Type: Journal Article
• Authors: Wei, Tiantian; Zong, Hua; Jiang, Shengxiang; Yang, Yue; Liao, Hui; Xie, Yahong; Wang, Wenjie; Li, Junze; Tang, Jun; Hu, Xiaodong
• Is Part Of: Superlattices and microstructures. Volume 118(2018)
• Page Start: 284
• Page End: 288
• Publication Date: 2018-06
• Subjects: GaN -- Si -- Serpentine-channeled mask -- High quality -- Low dislocation density; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2018.04.010
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: A novel serpentine-channeled mask was introduced to Si substrate for low-dislocation GaN epitaxial growth and the fully coalesced GaN film on the masked Si substrate was achieved for the first time. Compared with the epitaxial lateral overgrowth (ELOG) growth method, this innovative mask only requires one-step epitaxial growth of GaN which has only one high-dislocation region per mask opening. This new growth method can effectively reduce dislocation density, thus improving the quality of GaN significantly. High-quality GaN with low dislocation density ∼2.4 × 10 7 cm −2 was obtained, which accounted for about eighty percent of the GaN film in area. This innovative technique is promising for the growth of high-quality GaN templates and the subsequent fabrication of high-performance GaN-based devices like transistors, laser diodes (LDs), and light-emitting diodes (LEDs) on Si substrate. Highlights: Fully coalesced GaN film on a serpentine-channeled mask over Si substrate was achieved for the first time. This new growth method can improve the quality of GaN significantly. It just requires one-step epitaxial growth of GaN which has only one high-dislocation region per mask opening. High-quality GaN accounted for about 80% of the GaN film in area with low dislocation density ∼2.4 × 10 7 cm −2 .