A 75 GHz regenerative dynamic frequency divider with active transformer using InGaAs/InP HBT technology. (August 2017)

• Record Type: Journal Article
• Authors: Wang, Xi; Zhang, Bichan; Zhao, Hua; Su, Yongbo; Muhammad, Asif; Guo, Dong; Jin, Zhi
• Is Part Of: Journal of semiconductors. Volume 38:Number 8(2017:Aug.)
• Publication Date: 2017-08
• Subjects: InP -- hetero-junction bipolar transistors -- dynamic frequency divider; 84.40.Dc; 2560J -- 1350H; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/38/8/085001
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: This letter presents a high speed 2:1 regenerative dynamic frequency divider with an active transformer fabricated in 0.7 μ m InP DHBT technology with f T of 165 GHz and f max of 230 GHz. The circuit includes a two-stage active transformer, input buffer, divider core and output buffer. The core part of the frequency divider is composed of a double-balanced active mixer (widely known as the Gilbert cell) and a regenerative feedback loop. The active transformer with two stages can contribute to positive gain and greatly improve phase difference. Instead of the passive transformer, the active one occupies a much smaller chip area. The area of the chip is only 469 × 414 μ m 2 and it entirely consumes a total DC power of only 94.6 mW from a single −4.8 V DC supply. The measured results present that the divider achieves an operating frequency bandwidth from 75 to 80 GHz, and performs a −23 dBm maximum output power at 37.5 GHz with a 0 dBm input signal of 75 GHz.