Effect of uniaxial strain on electrical conductance and band gap of superlattice-graphene nanoribbons. (May 2015)

• Record Type: Journal Article
• Authors: Khoeini, Farhad
• Is Part Of: Superlattices and microstructures. Volume 81(2015)
• Page Start: 202
• Page End: 214
• Publication Date: 2015-05
• Subjects: Superlattice-graphene nanoribbons -- Uniaxial strain -- Magnetic field -- Tight-binding -- Green's function -- Conductance; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2015.02.002
• Languages: English
• ISSNs: 0749-6036

Abstract

Graphical abstract: Highlights: We study the transport properties of strained superlattice-graphene nanoribbons. Boron nitride structure and oriented strain cause the metal–semiconductor transition. Magnetic field creates a periodic metal–semiconductor transition. Conductance oscillations is controlled by both boron nitride concentration and the magnetic field. We could control the conductance and band gap of the SGNR with the strain and magnetic field. Abstract: In this paper, we study the electrical conductance and band gap of superlattice-graphene nanoribbons (SGNRs) attached to the two semi-infinite metallic leads. The calculations are based on the tight-binding model and Green's function method. We investigate the effects of uniaxial strains and the concentration of boron nitride (BN) slices as well as magnetic fields on the electrical conductance and the band gap of the system. Our numerical results show the electric conductance of the system reduces with increasing the concentration of boron nitride slices, x . Also, an energy gap opens at x = 0. 25 and its value increases with the growing the BN concentration of the alloy. Therefore, the BN hybrid structure can induce a metal–semiconductor transition, and for large value of the BN concentration, the system behaves as a wide gap semiconductor. We find that the impurities and oriented strains cause the metal–semiconductor phase transition, while the magnetic field creates a periodic metal–semiconductor transition. We could control the conductance and band gap of the system by varying of the relevant parameters, such as the concentration of boron nitride slices, the value and direction of the applied strain and the magnetic field.