Performances of two-finger stacked fin quinary indium gallium zinc aluminum oxide thin-film transistors. (July 2018)

• Record Type: Journal Article
• Authors: Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao; Lee, Ching-Ting
• Is Part Of: Solid-state electronics. Volume 145(2018)
• Page Start: 54
• Page End: 57
• Publication Date: 2018-07
• Subjects: Induced channel layer -- Quinary indium gallium zinc aluminum oxide materials -- Stacked fin thin-film transistors; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2018.04.008
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Performance of the two-finger stacked fin quinary IGZAO TFTs was investigated. Induced channel layer could be simultaneously formed by the top and bottom gates. Thickness (tch ) of induced channel layer in the IGZAO channel layer was estimated. Abstract: The two-finger stacked bottom gate and top gate fin indium gallium zinc aluminum oxide thin-film transistors (IGZAO TFTs) were fabricated. Since the bottom induced channel layer and the top induced channel layer were formed in the stacked TFTs using the bottom gate and the top gate, simultaneously. Consequently, drain-source current and transconductance of the stacked TFTs were enhanced about twice as those of the bottom gate TFTs and the top gate TFTs. The optimal performances of the stacked TFTs could be obtained, when the whole channel layer was induced as the carrier transportation path.