Cite
HARVARD Citation
Dvorak, D. et al. (2017). Regrowth mechanism for oxide isolation of GaAs nanowires. Nanotechnology. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Dvorak, D. et al. (2017). Regrowth mechanism for oxide isolation of GaAs nanowires. Nanotechnology. p. . [Online].