Regrowth mechanism for oxide isolation of GaAs nanowires. (4th September 2017)

• Record Type: Journal Article
• Authors: Dvorak, David; Darbandi, Ali; Kavanagh, Karen L; Watkins, Simon P
• Is Part Of: Nanotechnology. Volume 28:Number 38(2017)
• Publication Date: 2017-09-04
• Subjects: nanowires -- regrowth -- GaAs -- oxide; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aa8010
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Oxide-isolated GaAs nanowires (NWs) were obtained through a lithography-free method in which axial growth of NWs coated in aluminum oxide (Al2 O3 ) is restarted using an annealing step. NWs are grown using the vapor–liquid–solid method and coated in nanometer thin oxide films using atomic layer deposition. Continued growth at the oxide-coated nanoparticle (NP) occurs after the thermally-induced fracture of the oxide during annealing. This oxide fracture is observed to depend on NP diameter, oxide thickness and annealing temperature. A thermal expansion mismatch model for stresses on the oxide shell is put forward to explain these results.