Enhancement of optical and electrical properties of SILAR deposited ZnO thin films through fluorine doping and vacuum annealing for photovoltaic applications. (July 2015)

• Record Type: Journal Article
• Authors: Rajkumar, P.V.; Ravichandran, K.; Baneto, M.; Ravidhas, C.; Sakthivel, B.; Dineshbabu, N.
• Is Part Of: Materials science in semiconductor processing. Volume 35(2015:Jul.)
• Page Start: 189
• Page End: 196
• Publication Date: 2015-07
• Subjects: Zinc oxide -- Vacuum annealing -- SILAR technique -- TEM -- Optical -- Electrical properties; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.03.010
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Undoped and fluorine doped ZnO thin films were deposited onto glass substrates using successive ionic layer adsorption and reaction (SILAR) technique and then annealed at 350 °C in vacuum ambience. The F doping level was varied from 0 to 15 at% in steps of 5 at%. The XRD analysis showed that all the films are polycrystalline with hexagonal wurtzite structure and preferentially oriented along the (002) plane. Crystallite sizes were found to increase when 5 at% of F is doped and then decreased with further doping. It was seen from the SEM images that the doping causes remarkable changes in the surface morphology and the annealing treatment results in well-defined grains with an improvement in the grain size irrespective of doping level. All the films exhibit good transparency (>70%) after vacuum annealing. Electrical resistivity of the film was found to be minimum (1.32×10 −3 Ω cm) when the fluorine doping level was 5 at%.