Cite
HARVARD Citation
Luong, G. et al. (2015). Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3%. Solid-state electronics. pp. 19-23. [Online].
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Luong, G. et al. (2015). Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3%. Solid-state electronics. pp. 19-23. [Online].