Cite
HARVARD Citation
Koyama, M. et al. (2015). Assessment of technological and geometrical device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs. Solid-state electronics. pp. 36-41. [Online].
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Koyama, M. et al. (2015). Assessment of technological and geometrical device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs. Solid-state electronics. pp. 36-41. [Online].