The significant effect of film thickness on the properties of chalcopyrite thin absorbing films deposited by RF magnetron sputtering. (June 2015)

• Record Type: Journal Article
• Authors: Mishra, P.K.; Prasad, J.N.; Dave, V.; Chandra, R.; Choudhary, A.K.
• Is Part Of: Materials science in semiconductor processing. Volume 34(2015:Jun.)
• Page Start: 350
• Page End: 358
• Publication Date: 2015-06
• Subjects: CIGS -- Film thickness -- XRD -- Band gap; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.02.047
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this paper, thickness dependent structural, surface morphological, optical and electrical properties of RF magnetron sputtered CuIn0.8 Ga0.2 Se2 (CIGS) thin films were studied using X-ray diffraction (XRD), Transmission electron microscopy (TEM), Field emission scanning electron microscopy (FE-SEM), Atomic force microscopy (AFM), UV–vis–NIR spectrophotometer and Keithley electrical measurement unit. The peak intensity along (112) plane as well as crystallite size was found to increase with thickness. However, for higher film thickness >1.16 μm, crystallinity reduced due to higher % of Cu content. TEM analysis confirmed pollycrysallinity as well as chalcopyrite phase of deposited films. The band gap was found to decrease with increase in thickness yielding a minimum value of 1.12 eV for film thickness 1.70 μm. The I – V characteristics showed the ohmic behavior of metal semiconductor contact with higher conductivity for film thickness 1.16 μm.