Cite
MLA Citation
Joong Gun Oh et al.. “A High‐Performance Top‐Gated Graphene Field‐Effect Transistor with Excellent Flexibility Enabled by an iCVD Copolymer Gate Dielectric.” Small, vol. 14, no. 9, 2018, p. n/a. http://access.bl.uk/ark:/81055/vdc_100057841052.0x000019