Cite
HARVARD Citation
Oh, J. et al. (2018). A High‐Performance Top‐Gated Graphene Field‐Effect Transistor with Excellent Flexibility Enabled by an iCVD Copolymer Gate Dielectric. Small. 14 (9), p. n/a. [Online].
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Oh, J. et al. (2018). A High‐Performance Top‐Gated Graphene Field‐Effect Transistor with Excellent Flexibility Enabled by an iCVD Copolymer Gate Dielectric. Small. 14 (9), p. n/a. [Online].