Analysis of different parameters of channel material and temperature on threshold voltage of CNTFET. (March 2015)

• Record Type: Journal Article
• Authors: Kumar Sinha, Sanjeet; Chaudhury, Saurabh
• Is Part Of: Materials science in semiconductor processing. Volume 31(2015:Mar.)
• Page Start: 431
• Page End: 438
• Publication Date: 2015-03
• Subjects: MOSFET -- CNTFET -- Temperature -- Oxide thickness -- Threshold voltage -- Channel length; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2014.12.013
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Carbon nanotubes have some unique features and special properties that offer a great potential for nano-electronic devices. In this paper, we have analyzed the effect of chiral vector, metal work function, channel length and High-K dielectric on threshold voltage of CNTFET devices. We have also compared the effect of oxide thickness on gate capacitance and justified the advantage of CNTFET over MOSFET in nanometer regime. Simulation on HSPICE tool shows that high threshold voltage can be achieved at low chiral vector in CNTFET. It is also observed that the temperature has a negligible effect on threshold voltage of CNTFET. After that we have simulated and observed the effect of channel length variation on threshold voltage of CNTFET as well as of MOSFET devices and given a theoretical analysis on it. We found an unusual, yet, favorable characteristics that the threshold voltage increases with decreasing channel length in CNTFET devices in deep nanometer regime especially when the gate length is around 10 nm; which is quite contrary to the well known short channel effects in MOSFET. It is observed that at or below 10 nm channel length the threshold voltage increases rapidly in case of CNTFET device whereas in case of MOSFET device the threshold voltage decreases drastically.