Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode. (March 2015)

• Record Type: Journal Article
• Authors: Han, Jaecheon; Lee, Daehee; Jin, Boram; Jeong, Hwanhee; Song, June-O; Seong, Tae-Yeon
• Is Part Of: Materials science in semiconductor processing. Volume 31(2015:Mar.)
• Page Start: 153
• Page End: 159
• Publication Date: 2015-03
• Subjects: Vertical LED -- Via hole -- GaN -- Ohmic contact; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2014.11.038
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The effects of the n -contact design and chip size on the electrical, optical and thermal characteristics of thin-film vertical light-emitting diodes (VLEDs) were investigated to optimize GaN-based LED performance for solid-state lighting applications. For the small (chip size: 1000×1000 µm 2 ) and large (1450×1450 µm 2 ) VLEDs, the forward bias voltages are decreased from 3.22 to 3.12 V at 350 mA and from 3.44 to 3.16 V at 700 mA, respectively, as the number of n -contact via holes is increased. The small LEDs give maximum output powers of 651.0–675.4 mW at a drive current of 350 mA, while the large VLEDs show the light output powers in the range 1356.7–1380.2 mW, 700 mA, With increasing drive current, the small chips go through more severe degradation in the wall-plug efficiency than the large chips. The small chips give the junction temperatures in the range 51.1–57.2 °C at 350 mA, while the large chips show the junction temperatures of 83.1–93.0 °C at 700 mA, The small LED chips exhibit lower junction temperatures when equipped with more n -contact via holes.