Deformation and removal characteristics in nanoscratching of 6H-SiC with Berkovich indenter. (March 2015)

• Record Type: Journal Article
• Authors: Meng, Binbin; Zhang, Feihu; Li, Zhipeng
• Is Part Of: Materials science in semiconductor processing. Volume 31(2015:Mar.)
• Page Start: 160
• Page End: 165
• Publication Date: 2015-03
• Subjects: 6H-SiC -- Nanoscratching -- HPPT -- DBT -- Deformation.; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2014.11.034
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In order to analyze the deformation characteristics and removal mechanism of the single crystal silicon carbide at the nanoscale, the nanoscratching test was conducted on 6HSiC (0001) by using a Berkovich diamond indenter. The deformation and removal characteristics of 6H-SiC during a nanoscratching process by using a sharp indenter are significantly different from those through a single-point diamond turning (SPDT) method. The characteristics in different regimes of the scratching process like plastic flow and the form of fracture behavior were analyzed. The ductile/brittle transition (DBT) of this material was discussed in detail theoretically and experimentally. X-ray diffraction and a laser micro-Raman spectrometer were used for phase analysis after the scratching process. The results indicate that phase transformation has not occurred during the nanoscratching process of this material.