Band gap behavior of scandium aluminum phosphide and scandium gallium phosphide ternary alloys and superlattices. (March 2015)

• Record Type: Journal Article
• Authors: Benalia, S.; Merabet, M.; Rached, D.; Al-Douri, Y.; Abidri, B.; Khenata, R.; Labair, M.
• Is Part Of: Materials science in semiconductor processing. Volume 31(2015:Mar.)
• Page Start: 493
• Page End: 500
• Publication Date: 2015-03
• Subjects: Ab intio method -- Ternary alloy -- Energetic transition; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2014.12.021
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Full-potential linear muffin-tin (FP-LMTO) has been implanted within density functional theory (DFT) and within local density approximation. The structural and electronic properties of GaP, AlP and ScP binary compounds and their ternary alloys Sc x Al1− x P and Sc x Ga1− x P over a whole range of compositions (0≤ x ≤1) and the superlattices Sc0.25 Ga0.75 P/Sc0.5 Ga0.5 P and Sc0.25 Al0.75 P/Sc0.5 Ga0.5 P in the zinc-blende structure are investigated. The calculated resulted gave reasonable agreements with other published data.