An analytical avalanche breakdown model for double gate MOSFET. Issue 1 (January 2015)

• Record Type: Journal Article
• Authors: Cho, Edward Namkyu; Shin, Yong Hyeon; Yun, Ilgu
• Is Part Of: Microelectronics and reliability. Volume 55:Issue 1(2015)
• Page Start: 38
• Page End: 41
• Publication Date: 2015-01
• Subjects: DG MOSFET -- Avalanche breakdown model -- Channel length modulation -- Effective mobility model; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2014.08.019
• Languages: English
• ISSNs: 0026-2714

Abstract

Highlights: Analytical avalanche breakdown model for DG MOSFET. Effective mobility model dependent on doping concentration and electric field. Channel modulation effect model by solving Poisson's equation. Analytical model compared to 2D numerical simulation. Abstract: An analytical model of avalanche breakdown for double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is presented. First of all, the effective mobility ( μeff ) model is defined to replace the constant mobility model. The channel length modulation (CLM) effect is modeled by solving the Poisson's equation. The avalanche multiplication factor ( M ) is calculated using the length of saturation region (Δ L ). It is shown that the avalanche breakdown characteristics calculated from the analytical model agree well with commercially available 2D numerical simulation results. Based on the results, the reliability of the DG MOSFET can be estimated using the proposed analytical model.