Fast preparation of (111)‐oriented β‐SiC films without carbon formation by laser chemical vapor deposition from hexamethyldisilane without H2. Issue 4 (17th November 2017)

• Record Type: Journal Article
• Authors: Xu, Qingfang; Zhu, Peipei; Sun, Qingyun; Tu, Rong; Zhang, Song; Yang, Meijun; Li, Qizhong; Shi, Ji; Li, Haiwen; Zhang, Lianmeng; Goto, Takashi; Han, Mingxu; Yan, Jiasheng; Li, Shusen; Ohmori, Hitoshi
• Is Part Of: Journal of the American Ceramic Society. Volume 101:Issue 4(2018)
• Page Start: 1471
• Page End: 1478
• Publication Date: 2017-11-17
• Subjects: chemical vapor deposition -- films -- silicon carbide; Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.15315
• Languages: English
• ISSNs: 0002-7820

Abstract

Abstract: (111)‐oriented β‐SiC films were prepared by laser chemical vapor deposition using a diode laser (wavelength: 808 nm) from a single liquid precursor of hexamethyldisilane (Si(CH3 )3 –Si(CH3 )3, HMDS) without H2 . The effects of laser power ( P L ), total pressure ( P tot ) and deposition temperature ( T dep ) on the microstructure, carbon formation and deposition rate ( R dep ) were investigated. β‐SiC films with carbon formation and graphite films were prepared at P L ≥ 170 W and P to ≥ 1000 Pa, respectively. Carbon formation strongly inhibited the film growth. β‐SiC films without carbon formation were obtained at P tot = 400‐800 Pa and P L = 130‐170 W. The maximum R dep was about 50 μm·h −1 at P L = 170 W, P tot = 600 Pa and T dep = 1510 K. The investigation of growth mechanism shows that the photolytic of laser played an important role during the depositions.