Fast preparation of (111)‐oriented β‐SiC films without carbon formation by laser chemical vapor deposition from hexamethyldisilane without H2. Issue 4 (17th November 2017) - Xu, Qingfang
Abstract: (111)‐oriented β‐SiC films were prepared by laser chemical vapor deposition using a diode laser (wavelength: 808 nm) from a single liquid precursor of hexamethyldisilane (Si(CH3 )3 –Si(CH3 )3, HMDS) without H2 . The effects of laser power ( P L ), total pressure ( P tot ) and deposition temperature ( T dep ) on the microstructure, carbon formation and deposition rate ( R dep ) were investigated. β‐SiC films with carbon formation and graphite films were prepared at P L ≥ 170 W and P to ≥ 1000 Pa, respectively. Carbon formation strongly inhibited the film growth. β‐SiC films without carbon formation were obtained at P tot = 400‐800 Pa and P L = 130‐170 W. The maximum R dep was about 50 μm·h −1 at P L = 170 W, P tot = 600 Pa and T dep = 1510 K. The investigation of growth mechanism shows that the photolytic of laser played an important role during the depositions.