Effect of oxygen content of the LaAlO3 layer on the synaptic behavior of Pt/LaAlO3/Nb-doped SrTiO3 memristors for neuromorphic applications. (February 2018)

• Record Type: Journal Article
• Authors: Jang, Jun Tae; Ko, Daehyun; Ahn, Geumho; Yu, Hye Ri; Jung, Haesun; Kim, Yeon Soo; Yoon, Chansoo; Lee, Sangik; Park, Bae Ho; Choi, Sung-Jin; Kim, Dong Myong; Kim, Dae Hwan
• Is Part Of: Solid-state electronics. Volume 140(2018)
• Page Start: 139
• Page End: 143
• Publication Date: 2018-02
• Subjects: Pt/LaAlO3/Nb-doped SrTiO3 memristor -- Synaptic behavior -- Thermionic emission -- Poole-Frenkel (P-F) emission -- Oxygen-content effect -- Spike time-dependent plasticity (STDP); Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.10.032
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Spike time-dependent plasticity (STDP) in the Pt/LaAlO3 /Nb-doped SrTiO3 memristor. The effect of oxygen content in the LaAlO3 layer on synaptic behavior. The trade-off between large current and efficient STDP controlled by oxygen content. Abstract: We report the effect of the oxygen content of the LaAlO3 layer on the synaptic behavior in the Pt/LaAlO3 /Nb-doped SrTiO3 memristor for neuromorphic applications. As the oxygen-content decreases, the current becomes larger and the spike time-dependent plasticity (STDP) becomes less sensitive to the time difference between pre- and post-synaptic spike voltage. In addition, the conduction mechanism, which was found to be a combination of thermionic and Poole-Frenkel emissions, and the effect of oxygen content are explained in association with the oxygen vacancy in the LaAlO3 layer. The trade-off between large current and efficient STDP can be controlled by the oxygen content. Furthermore, the results of extracting the synaptic strength-based model parameters indicate that the Pt/LaAlO3 /Nb-doped SrTiO3 shows the efficient STDP characteristics in comparison to previously reported memristor materials.