Manufacturing and electrical characterization of Al-doped ZnO-coated silicon nanowires. (1st March 2018)

• Record Type: Journal Article
• Authors: Kaya, Ahmet; Polat, K. Gurkan; Mayet, Ahmed S.; Mao, Howard; Altındal, Şemsettin; Islam, M. Saif
• Is Part Of: Materials science in semiconductor processing. Volume 75(2018)
• Page Start: 124
• Page End: 129
• Publication Date: 2018-03-01
• Subjects: Al-doped ZnO -- Silicon nanowires -- Electrical properties; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.10.022
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The p-type Si nanowires were synthesized via deep reactive ion etching (DRIE). Al-doped ZnO films were coated on a p-Si nanowires substrate using the sol-gel method. Al-doped ZnO/p-Si NWs were characterized using current-voltage (I-V) and capacitance-voltage (C-V) measurements in the dark and under illumination at room temperature. Electrical parameters such as series resistance (Rs ), ideality factor (n), barrier height (ΦB ) and doping concentration atoms (NA ) were investigated using the electrical measurements values at room temperature. Overall, I-V and C-V plots of the NWs were close to what was predicted and had excellent performance. The fabricated Al-doped ZnO/p-Si nanowires are more sensitive to light and frequency, so they are a promising candidate to be used as photovoltaic devices and photo-capacitors.