Read margin analysis of crossbar arrays using the cell-variability-aware simulation method. (February 2018)

• Record Type: Journal Article
• Authors: Sun, Wookyung; Choi, Sujin; Shin, Hyungsoon
• Is Part Of: Solid-state electronics. Volume 140(2018)
• Page Start: 55
• Page End: 58
• Publication Date: 2018-02
• Subjects: Crossbar array -- RRAM -- Read margin; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.10.016
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: This paper proposes a new concept of read margin analysis of crossbar arrays using cell-variability-aware simulation. The size of the crossbar array should be considered to predict the read margin characteristic of the crossbar array because the read margin depends on the number of word lines and bit lines. However, an excessively high-CPU time is required to simulate large arrays using a commercial circuit simulator. A variability-aware MATLAB simulator that considers independent variability sources is developed to analyze the characteristics of the read margin according to the array size. The developed MATLAB simulator provides an effective method for reducing the simulation time while maintaining the accuracy of the read margin estimation in the crossbar array. The simulation is also highly efficient in analyzing the characteristic of the crossbar memory array considering the statistical variations in the cell characteristics.