Enhanced transconductance in a double-gate graphene field-effect transistor. (March 2018)

• Record Type: Journal Article
• Authors: Hwang, Byeong-Woon; Yeom, Hye-In; Kim, Daewon; Kim, Choong-Ki; Lee, Dongil; Choi, Yang-Kyu
• Is Part Of: Solid-state electronics. Volume 141(2018)
• Page Start: 65
• Page End: 68
• Publication Date: 2018-03
• Subjects: Double-gate -- Field-effect transistor -- Graphene -- Transconductance; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.12.008
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: A double-gate structure is adopted for a graphene transistor. Maximum transconductance is enhanced 50% by using the double-gate structure. Using a compact model, the enhanced transconductance is quantitatively explained. Abstract: Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 μS/μm, that of the DG GFET was 25.7 μS/μm, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.