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HARVARD Citation
Li, L. et al. (2018). Epitaxial Stress‐Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate. Advanced materials interfaces. 5 (2), p. n/a. [Online].
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Li, L. et al. (2018). Epitaxial Stress‐Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate. Advanced materials interfaces. 5 (2), p. n/a. [Online].