Impact of active layer thickness in thin-film transistors based on Zinc Oxide by ultrasonic spray pyrolysis. (July 2015)

• Record Type: Journal Article
• Authors: Dominguez, Miguel A.; Flores, Francisco; Luna, Adan; Martinez, Javier; Luna-Lopez, Jose A.; Alcantara, Salvador; Rosales, Pedro; Reyes, Claudia; Orduña, Abdu
• Is Part Of: Solid-state electronics. Volume 109(2015)
• Page Start: 33
• Page End: 36
• Publication Date: 2015-07
• Subjects: ZnO -- Spray pyrolysis -- Thin film transistors; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.03.012
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Application of ZnO films by ultrasonic spray pyrolysis at 200 °C in TFTs is demonstrated. Thicker active layer results in better output characteristics ( I ds vs. V ds ). Thinner active layer results in better transfer characteristics such as on/off-current ratio. Abstract: In this work, the preparation of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at low-temperature and its application in thin-film transistors (TFTs) are presented, as well, the impact of the active layer thickness and gate dielectric thickness in the electrical performance of the ZnO TFTs. A thinner active layer resulted in better transfer characteristics such as higher on/off-current ratio, while a thicker active layer resulted in better output characteristics. The ZnO films were deposited from 0.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas on a hotplate at 200 °C. The ZnO films obtained at 200 °C were characterized by optical transmittance, Photoluminescence spectroscopy and X-ray diffraction.