The calculation of InGaN quantum dot formation mechanism on GaN pyramid. (August 2015)

• Record Type: Journal Article
• Authors: Zhou, Shuai; Liu, Yumin; Wang, Donglin; Yu, Zhongyuan; Zhao, Wei; Le, Lifeng; Holtz, Per Olof
• Is Part Of: Superlattices and microstructures. Volume 84(2015)
• Page Start: 72
• Page End: 79
• Publication Date: 2015-08
• Subjects: InGaN quantum dots -- GaN pyramid -- Critical diameter; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2015.03.067
• Languages: English
• ISSNs: 0749-6036

Abstract

Highlights: We use a an equilibrium approach to calculate the free energy and composition distribution of InGaN/GaN quantum dot. The energy balance method is adopted to predict critical conditions for quantum dot formation. We find that the formation of QD depends strongly on the size of pyramid top surface. Abstract: An equilibrium approach is used to calculate the free energy and composition distribution of InGaN/GaN quantum dot located on the InGaN/GaN pyramid. The energy balance method is adopted to predict critical conditions for quantum dot formation. We find that the formation of QD depends strongly on the size of pyramid top surface. The results can fit our experiment qualitatively.