Formation of self-organized nano-surfaces on III–V semiconductors by low energy oxygen ion bombardment. (September 2015)

• Record Type: Journal Article
• Authors: Hernández, A.G.; Kudriavtsev, Yu.; Gallardo, S.; Avendaño, M.; Asomoza, R.
• Is Part Of: Materials science in semiconductor processing. Volume 37(2015:Sep.)
• Page Start: 190
• Page End: 198
• Publication Date: 2015-09
• Subjects: Ion beam sputtering -- GaAs -- GaSb -- InSb -- Surface patterning; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.02.074
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Pattern formation on surfaces of III–V compound semiconductors GaAs, GaSb, and InSb by O 2 + ion sputtering was studied. For GaAs, a ripple pattern was observed under a 2-keV primary beam energy for two ion fluences, i.e., 3.1×10 18 ions/cm 2 and 5.4×10 18 ions/cm 2 . The pattern wavelengths were 175 nm and 200.2 nm. A bubble-like structure was observed on the GaSb surface bombarded with 1-keV and 2-keV oxygen ions. In the case of InSb, several pyramidal structures with sub-micrometer dimensions were observed when the ion energy was 1 keV. When the ion energy was increased to 2 keV, the pyramidal structures acquired micrometer dimensions and a ripple pattern with a wavelength of 246 nm was observed in the surrounding area.