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MLA Citation
A. Graff et al.. “High resolution physical analysis of ohmic contact formation at GaN-HEMT devices.” Microelectronics and reliability, vol. 76, 2017, pp. 338–343. http://access.bl.uk/ark:/81055/vdc_100055920746.0x00004f
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A. Graff et al.. “High resolution physical analysis of ohmic contact formation at GaN-HEMT devices.” Microelectronics and reliability, vol. 76, 2017, pp. 338–343. http://access.bl.uk/ark:/81055/vdc_100055920746.0x00004f