Impact of aging on the soft error rate of 6T SRAM for planar and bulk technologies. (September 2017)

• Record Type: Journal Article
• Authors: Rousselin, T.; Hubert, G.; Régis, D.; Gatti, M.; Bensoussan, A.
• Is Part Of: Microelectronics and reliability. Volume 76/77(2017)
• Page Start: 159
• Page End: 163
• Publication Date: 2017-09
• Subjects: Aging -- NBTI -- 6T SRAM -- SEE -- Modelling -- Soft error rate; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2017.07.078
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: This paper evaluates the impact of aging on the radiation sensitivity of 6T SRAM for two planar bulk technologies. This study is motivated by the growing impact of aging and radiation effects on the reliability of CMOS technology. A modelling methodology dedicated to this new phenomenon is proposed. This modelling uses the radiation modelling device MUSCA SEP3 and an electrical aging modelling. First, the impact of aging on SEE sensitivity is studied through a parametric modeling of the threshold voltages of the transistors composing the 6T SRAM. Then, an operative avionics environment is modelled in order to evaluate the consequences on reliability.