Cite
MLA Citation
J.G. Tartarin et al.. “Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging.” Microelectronics and reliability, vol. 76, 2017, pp. 344–349. http://access.bl.uk/ark:/81055/vdc_100055864081.0x00005b