A semi-superjunction MOSFET with P-type Bottom Assist Layer. (July 2015)

• Record Type: Journal Article
• Authors: Chen, Weizhong; Wang, Wei; Liu, Yong; Zhang, Bo; Ma, Chao
• Is Part Of: Superlattices and microstructures. Volume 83(2015)
• Page Start: 745
• Page End: 754
• Publication Date: 2015-07
• Subjects: Superjunction MOSFET -- Bottom Assist Layer -- Breakdown voltage -- On-state resistance; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2015.03.065
• Languages: English
• ISSNs: 0749-6036

Abstract

Highlights: The P-BAL is introduced in the n-BAL. The BV of the proposed MOSFET is improved 25% higher than the conventional. The trade-off between the BV and R on, sp is enhanced. Abstract: A new Semi-Superjunction Vertical Double-diffusion MOSFET (Semi-SJ MOSFET) with P-type Bottom Assist Layer (P-BAL) is proposed. The P-BAL is introduced upon the N-Stop substrate and embedded in the n-BAL, on the one hand, another reverse biasing PN junction J P-BAL/N-Stop at the bottom substrate is formed, which helps to deplete the n-BAL along the longitudinal direction and changes the shapes of the electric field distribution. On the other hand, another Semi-SJ structure is formed by the P-BAL and n-BAL, the transverse electric field in n-BAL part is enhanced, and this indicates that the trade-off between breakdown voltage (BV) and on-state resistance ( R on, sp ) has been optimized due to the improvement of BV. As results show, in the proposed MOSFET, the BV (i.e., 1097 V) is improved 25% higher than that of the conventional Semi-SJ structure (i.e., 877 V) and the proposed does negligible disadvantage to the R on, sp (i.e., the proposed with a R on, sp of 59 mΩ cm 2 and the conventional MOSFET with a R on, sp of 56 mΩ cm 2 ).