Investigation of the dual-wavelength light-emitting diodes with AlInGaN spectral adjustment layer based on the Al/In ratios. (July 2015)

• Record Type: Journal Article
• Authors: Yang, Min; Sun, Huiqing; Cai, Jinxin; Zheng, Huan; Sun, Hao; Li, Xuna; Guo, Zhiyou
• Is Part Of: Superlattices and microstructures. Volume 83(2015)
• Page Start: 176
• Page End: 183
• Publication Date: 2015-07
• Subjects: AlInGaN -- Multi-quantum well -- Light-emitting diodes; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2015.03.035
• Languages: English
• ISSNs: 0749-6036

Abstract

Highlights: We proposed an Al x In y Ga z N spectral adjustment layer for dual-wavelength LEDs. The influences of Al/In ratios for spontaneous emission rate of each MQWs studied. The adjustment of emission rate for each MQWs realized with tuning the Al/In ratios. We investigated the effects of injection current for emission rate of each MQWs. The relation of spontaneous emission rate with injection currents explained. Abstract: In this paper, we propose Al x In y Ga z N quaternary alloys spectral adjustment layer (SAL) for visible spectrum control of dual-wavelength emission in single-chip InGaN/AlInGaN multiple quantum wells (MQWs) light-emitting diodes (LEDs). The mechanism and effects for visible spectrum control with different ratios of Al to In (Al/In) in the AlInGaN spectral adjustment layer are investigated numerically. With the increasing of the Al/In ratios in the spectral adjustment layer, the spontaneous emission rate of In0.08 Ga0.92 N/Al0.1 In0.008 Ga0.892 N active region increase, while the spontaneous emission rate In0.16 Ga0.84 N/Al0.1 In0.008 Ga0.892 N active region is suppressed. Besides, the influence of driving current for visible spectrum control is also expounded. The simulation results show that the spontaneous emission rate of In0.16 Ga0.84 N/Al0.1 In0.008 Ga0.892 N active region could be enhanced more than In0.08 Ga0.92 N/Al0.1 In0.008 Ga0.892 N active region with the increasing of driving current. By the adjustment of spontaneous rates in the two active regions, the relative luminous spectrum of dual-wavelength in InGaN/AlInGaN LEDs can be controlled.