Calculation of conductance for triangular multi-barrier structure in a constant electric field. (July 2015)

• Record Type: Journal Article
• Authors: Luo, Min; Yu, Guanxia; Xia, Lijuan
• Is Part Of: Superlattices and microstructures. Volume 83(2015)
• Page Start: 168
• Page End: 175
• Publication Date: 2015-07
• Subjects: Triangular multi-barrier structure -- Conductance; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2015.02.015
• Languages: English
• ISSNs: 0749-6036

Abstract

Highlights: The unit area conductance expression for one-dimensional triangular multi-barrier structure in the presence of a constant electric field has been derived. The relationship between the unit area conductance and the bias voltage have been analyzed. The influence of temperature, the width of the barrier and the height of the barrier on the curves of the unit area conductance–voltage have been analyzed. Abstract: The current density expression and the unit area conductance for one-dimensional triangular multi-barrier structure in the presence of a constant electric field have been derived. For a selected range of parameters of semiconductor materials, the characteristics of unit area conductance versus the applied voltage have been investigated by the numerical calculations, and then the influence on the curve of the unit area conductance–voltage changing with the temperature, the width of the barrier and the height of the barrier have been analyzed.