Investigation of hole transport in α-NPD using impedance spectroscopy with F4TCNQ as hole-injection layer. (July 2015)

• Record Type: Journal Article
• Authors: Fernandes, Jean Maria; Kiran, M. Raveendra; Ulla, Hidayath; Satyanarayan, M.N.; Umesh, G.
• Is Part Of: Superlattices and microstructures. Volume 83(2015)
• Page Start: 766
• Page End: 775
• Publication Date: 2015-07
• Subjects: Charge-transport -- Mobility -- Poole–Frenkel -- Capacitance -- Conductance -- Impedance; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2015.04.019
• Languages: English
• ISSNs: 0749-6036

Abstract

Highlights: Charge carrier mobility in organic semiconductors increases with sequential doping. Thickness dependence of hole transport layer in the dispersive transport is shown. Increase in mobility value with thickness of the hole transport layer is observed. Capacitance, conductance and impedance methods give constant Poole–Frenkel mobility. Abstract: The charge carrier transport is studied in N, N ′-di(1-naphthyl)- N, N ′-diphenyl-(1, 1′-biphenyl)-4, 4′-diamine (α-NPD) with the incorporation of sequentially doped p-type dopant 2, 3, 5, 6-tetrafluoro-7, 7, 8, 8-tetracyanoquinodimethane (F4 TCNQ) as hole-injection layer in hole-only device structures. The field dependent mobility of the charge carriers is determined using frequency dependent capacitance, conductance and impedance methods by varying the thickness of α-NPD. The Poole–Frenkel zero-field mobility and the Poole–Frenkel coefficient thus obtained for each device in all the three methods is found to be almost constant.