Growth mechanism and structure characterizations of GaSb islands grown on Si (1 0 0) substrates by LP-MOCVD. (July 2015)

• Record Type: Journal Article
• Authors: Lv, You; Liu, Ren-Jun; Wang, Lian-Kai; Li, Guo-Xing; Zhang, Yuan-Tao; Dong, Xin; Zhang, Bao-Lin
• Is Part Of: Superlattices and microstructures. Volume 83(2015)
• Page Start: 834
• Page End: 840
• Publication Date: 2015-07
• Subjects: GaSb island -- Si -- MOCVD; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2015.04.022
• Languages: English
• ISSNs: 0749-6036

Abstract

Highlights: GaSb islands were grown on Si (1 0 0) substrates directly by LP-MOCVD. We investigated the coalescence characteristics of the GaSb islands. Ostwald ripening substituted for migration gradually in the coalescence process. Abstract: In this paper, the growth mechanism and the morphologies of GaSb islands grown on Si (1 0 0) by low-pressure metal–organic chemical vapor deposition have been studied. It was observed the GaSb growth mode transited from SK to VW mode with time, while the islands migrated in VW mode on the surface. As growth time prolonging, the islands were coarsening consistent with the considerations of Ostwald ripening substituting for migration. And it was the similar coalescence process in the various interruption time. The formation of giant islands reduced the surface energy with the island-induced strain fields which drive the islands distribution evenly.