Analytical modeling simulation and characterization of short channel Junctionless Accumulation Mode Surrounding Gate (JLAMSG) MOSFET for improved analog/RF performance. (December 2016)

• Record Type: Journal Article
• Authors: Trivedi, Nitin; Kumar, Manoj; Haldar, Subhasis; Deswal, S.S.; Gupta, Mridula; Gupta, R.S.
• Is Part Of: Superlattices and microstructures. Volume 100(2016)
• Page Start: 1263
• Page End: 1275
• Publication Date: 2016-12
• Subjects: Accumulation mode MOSFET -- Analytical model -- Junctionless -- Superposition techniques -- Surrounding gate; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2016.11.009
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: An analytical model for Junctionless Accumulation Mode Surrounding Gate (JLAMSG) MOSFET is developed using superposition technique. The model incorporates source/drain and channel depletion for an accurate analysis. The device parameter dependent electrostatic center potential, drain current (IDS ) and subthreshold slope (SS) have been evaluated. The numerical simulation results using ATLAS-3D device simulator are in good agreement with the results obtained from the developed analytical model. A comparative assessment between Junctionless (JL) and Junctionless Accumulation Mode (JLAM) Surrounding Gate (SG) devices for analog/RF performance is also carried out. The superiority of JLAMSG MOSFET over Junctionless Surrounding Gate (JLSG) is discussed for Analog and RF application. Highlights: Junctionless Accumulation Mode MOSFET for Improved Analog/RF performance. Analytical Modeling of Junctionless Accumulation Mode Surrounding Gate MOSFET(JLAMSG). Comparative Analysis Between Junctionless Surrounding Gate (JLSG) and JLAMSG MOSFET. Reduction of Short Channel Effect is JLAMSG MOSFET.