Enhanced photovoltaic performance of bulk heterojunction based on ZnS quantum dots-grafted graphene. (December 2016)
- Record Type:
- Journal Article
- Title:
- Enhanced photovoltaic performance of bulk heterojunction based on ZnS quantum dots-grafted graphene. (December 2016)
- Main Title:
- Enhanced photovoltaic performance of bulk heterojunction based on ZnS quantum dots-grafted graphene
- Authors:
- Jindal, Shikha
Giripunje, Sushama M. - Abstract:
- Abstract: ZnS quantum dots (QDs) and ZnS:graphene QDs were synthesized successfully via simple sonochemical method. X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM) analysis revealed the average size of ZnS and ZnS:graphene QDs of the order of 3.7 nm and 8.4 nm, respectively. The band gap of ZnS:graphene QDs was tuned to 4.9 eV. Fourier transform infrared (FTIR) analysis confirms the formation of single phase ZnS QDs. The significant increase in conductivity of the order of 10 4 S/cm was observed in ZnS:graphene QDs. The bulk heterojunction devices ITO/PEDOT:PSS/P3HT:ZnSQDs/Al and ITO/PEDOT:PSS/P3HT:(ZnS:graphene)QDs/Al were fabricated. Here we demonstrate the increase in current density (from 2.44 μA/cm 2 to 98.4 μA/cm 2 ), alongwith the lower turn on voltage (decrease from 0.40 V to 0.12 V) by using the ZnS:graphene QDs as compared to pristine ZnS QDs in the active layer. Furthermore, this enhancement in current density shows that the ZnS:graphene QDs have a great potential for active layer in photovoltaic devices. Highlights: ZnS and ZnS:graphene quantum dots (QDs) were synthesized by sonochemical synthesis. Band gap of quantum dots has tuned from 6 eV to 4.9 eV. Current density of bulk heterojunction increases by incorporation of graphene. XRD and HRTEM confirms the formation of quantum dots.
- Is Part Of:
- Superlattices and microstructures. Volume 100(2016)
- Journal:
- Superlattices and microstructures
- Issue:
- Volume 100(2016)
- Issue Display:
- Volume 100, Issue 2016 (2016)
- Year:
- 2016
- Volume:
- 100
- Issue:
- 2016
- Issue Sort Value:
- 2016-0100-2016-0000
- Page Start:
- 683
- Page End:
- 693
- Publication Date:
- 2016-12
- Subjects:
- Semiconductors -- Nanocrystalline materials -- Quantum dots -- Zinc sulphide (ZnS) -- Graphene
Superlattices as materials -- Periodicals
Microstructure -- Periodicals
Semiconductors -- Periodicals
Superréseaux -- Périodiques
Microstructure (Physique) -- Périodiques
Semiconducteurs -- Périodiques
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/07496036 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.spmi.2016.10.030 ↗
- Languages:
- English
- ISSNs:
- 0749-6036
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8547.076700
British Library DSC - BLDSS-3PM
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- 5511.xml