Interruption time effects on InGaAs/InAlAs superlattices of quantum cascade laser structures grown by MOCVD. (December 2016)

• Record Type: Journal Article
• Authors: Demir, Ilkay; Elagoz, Sezai
• Is Part Of: Superlattices and microstructures. Volume 100(2016)
• Page Start: 723
• Page End: 729
• Publication Date: 2016-12
• Subjects: Superlattice -- InGaAs -- InAlAs -- MOCVD -- QCL; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2016.10.027
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: We report the growth of high quality InGaAs/InAlAs quantum cascade laser (QCL) structure which composed of superlattices (SLs) and the effects of interruption time between each layer of the SL structure. Inserting an interruption delay during the growth dramatically effects the quality of the SL as indicated by crystallinity, interface sharpness and optical properties. The results show that an increase in interruption time up to a certain value makes sharper interfaces and improves optical and structural properties, but, beyond that value, overall quality starts to degrade. The composition and the growth rate of each single thin layer are determined by using high resolution X-ray diffraction (HRXRD) measurements. Highlight: The sequential growth of high quality InGaAs and InAlAs epitaxial layers is demonstrated. Inserting an interruption time between the layers during growth dramatically changes the overall quality. It is shown with 3 s interruption time, the crystal quality, optical quality and interfacial quality of InGaAs/InAlAs superlattices gives the best results.