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HARVARD Citation
Zeinali, B. et al. (n.d.). Low‐leakage sub‐threshold 9 T‐SRAM cell in 14‐nm FinFET technology. International journal of circuit theory and applications. pp. 1647-1659. [Online].
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Zeinali, B. et al. (n.d.). Low‐leakage sub‐threshold 9 T‐SRAM cell in 14‐nm FinFET technology. International journal of circuit theory and applications. pp. 1647-1659. [Online].