Ag metal mid layer based on new sensing multilayers structure extended gate field effect transistor (EG-FET) for pH sensor. (February 2018)

• Record Type: Journal Article
• Authors: Rasheed, Hiba S.; Ahmed, Naser M.; Matjafri, M.Z.
• Is Part Of: Materials science in semiconductor processing. Volume 74(2018)
• Page Start: 51
• Page End: 56
• Publication Date: 2018-02
• Subjects: Ag metal -- EGFET -- PH -- Hysteresis -- Multilayers; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.10.011
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: This study focus on the effectiveness of ZnO/Ag/ZnO (ZAZ) multilayers films thickness on electrical properties of pH sensor and structural properties such as XRD, AFM, the multilayers structure ZnO/Ag/ZnO deposit on glass substrate by using RF and DC magnetron sputtering system at different thickness (200/100/200) nm, (100/50/100) nm, XRD results indicated that the multilayers have polycrystalline phase for Ag metal. ZnO/Ag/ZnO was tested as EGFET for the first time the effect of multilayers thickness on chemical sensitivity, linearity and hysteresis voltage were demonstrated and found 0.62μA 1/2 /pH, 99.92%, 5.4 mV for multilayer thickness (200/100/200) nm while 0.25 μA 1/2 /pH, 97%, 3.2 mV at multilayers thickness (100/50/100) nm respectively.