An extensive study on the structural evolution and gamma radiation stability of TeO2 thin films. (February 2018)

• Record Type: Journal Article
• Authors: Sudha, A.; Maity, T.K.; Sharma, S.L.; Gupta, A.N.
• Is Part Of: Materials science in semiconductor processing. Volume 74(2018)
• Page Start: 347
• Page End: 351
• Publication Date: 2018-02
• Subjects: TeO2 -- Structure -- Gamma radiation sensing -- Sensitivity; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2017.10.018
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The influence of post deposition thermal annealing on the structure and gamma radiation sensing properties of thermally evaporated TeO2 thin films was studied. The as-deposited films showed amorphous nature, the crystallization into the mixed phase (tetragonal and orthorhombic) occurs on annealing at 350 °C and the crystallization into the pure tetragonal structure occurs at higher annealing temperatures. The grain size in the TeO2 films grew with the increase in annealing temperature. Among the thin films investigated, the films annealed at 150 °C showed the highest response and sensitivity to gamma radiation. The results also indicate the significance of the post deposition thermal annealing up to the temperature of 150 °C in improving the gamma radiation sensing properties of the TeO2 films.